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  for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 1 general description functional diagram the h mc 754 s 8g e is a gaas/ i nga p hbt dual c hannel gain block mmic sm t amplifer covering d c to 1 ghz. this versatile product contains two gain blocks, packaged in a single 8 lead plastic soic -8, for use with both amplifers combined in push-pull confguration using external baluns to cancel out second order non-linearities and improve ip 2 performance. i n this confguration, the h mc 754 s 8g e offers high gain, very low distortion & simple external matching. this high linearity amplifer consumes only 160ma from a single positive supply. o utput ip 2: +78 dbm high gain: 14.5 db high o utput ip 3: +38 dbm 75 o hm i mpedance s ingle p ositive s upply: +5 v r obust 1000 v es d, c lass 1 c soic -8 sm t p ackage typical applications the h mc 754 s 8g e is ideal for: ? c at v / broadband i nfrastructure ? test & m easurement e quipment ? l ine amps and f iber n odes ? c ustomer p remise e quipment electrical specifcations, t a = +25 c, vcc1 = vcc2 = 5v, zo = 75 ohm [1] p arameter min. typ. max. units gain 0.05 - 0.5 ghz 0.5 - 0.87 ghz 0.87 - 1.0 ghz 13.5 12.7 12.1 14.7 14.2 13.4 db db db gain v ariation o ver temperature 0.05 - 0.87 ghz 0.008 db/ c input r eturn loss 0.05 - 0.5 ghz 0.5 - 0.87 ghz 17 10 db db output r eturn loss 0.05 - 0.5 ghz 0.5 - 0.87 ghz 10 20 db db r everse isolation 0.05 - 0.87 ghz 23 db output p ower for 1 db c ompression ( p1db) 0.05 - 0.87 ghz 19.5 21 dbm o utput third o rder i ntercept p oint (ip3) (p out= 0 dbm per tone, 1 mhz spacing) 0.05 - 0.87 ghz 38 dbm output second o rder i ntercept p oint (ip2) 0.05 - 0.5 ghz 78 dbm c omposite second o rder (cso) [2] 0.05 - 0.87 ghz -81 dbc c omposite triple beat ( ctb) [2] 0.05 - 0.87 ghz -75 dbc c ross modulation (xmod) [2] 0.05 - 0.87 ghz -67 dbc noise f igure 0.05 - 0.5 ghz 0.05 - 0.87 ghz 5.5 6.5 db db s upply c urrent (icc1 + icc2) 145 160 175 ma [1] data taken with dual amplifers combined in push-pull (default) confguration [2] i nput level +15 dbmv , 133 channels - with analog modulation features hmc754s8ge gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz v00.0409
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 2 output return loss vs. temperature gain & return loss gain vs. temperature output ip3 vs. temperature input return loss vs. temperature output ip2 vs. temperature hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz -40 -30 -20 -10 0 10 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 s21 s11 s22 response (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c return loss (db) frequency (ghz) 30 32 34 36 38 40 42 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c frequency (ghz) ip3 (dbm) 0 3 6 9 12 15 18 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c return loss (db) frequency (ghz) 50 60 70 80 90 100 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 25c 85c -40c frequency (ghz) ip2 (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 3 output ip2 vs. output power cso / ctb / xmod @ +15 dbmv input, 133 channels (analog) noise figure vs. temperature p1db vs. temperature reverse isolation vs. temperature hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c noise figure (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c reverse isolation (db) frequency (ghz) 0 5 10 15 20 25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 25c 85c -40c p1db (dbm) frequency (ghz) 70 74 78 82 86 90 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 pout = -3dbm pout = 0dbm pout = 3dbm pout = 6dbm frequency (ghz) ip2 (dbm) -100 -90 -80 -70 -60 -50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 cso- cso+ ctb xmod frequency (ghz) response (dbc)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 4 hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz output ip3 vs. frequency p1db vs. frequency noise figure vs. frequency 30 32 34 36 38 40 42 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 frequency (ghz) ip3 (dbm) 0 5 10 15 20 25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 p1db (dbm) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 noise figure (db) frequency (ghz) option 1 - improved input return loss & gain flatness (with lower ip2) application gain & return loss output ip2 vs. frequency -40 -30 -20 -10 0 10 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 s21 s11 s22 response (db) frequency (ghz) 50 60 70 80 90 100 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 frequency (ghz) ip2 (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 5 p1db vs. frequency noise figure vs. frequency 0 5 10 15 20 25 0 10 20 30 40 50 60 70 80 90 100 frequency (mhz) p1db (dbm) 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 noise figure (db) frequency (mhz) option 2 - 10 to 100 mhz application gain & return loss output ip3 vs. frequency -40 -30 -20 -10 0 10 20 0 10 20 30 40 50 60 70 80 90 100 s21 s11 s22 response (db) frequency (mhz) 30 32 34 36 38 40 42 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 frequency (ghz) ip3 (dbm) hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 6 hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz outline drawing absolute maximum ratings c ollector bias v oltage ( v cc) +5.5 v dc rf i nput p ower ( rfin ) +10 dbm junction temperature 150 c c ontinuous p diss (t = 85 c ) (derate 18.69 mw/ c above 85 c ) 1.21 w thermal r esistance (junction to ground paddle) 53.5 c /w s torage temperature -65 to +150 c o perating temperature -40 to +85 c es d s ensitivity (hb m ) c lass 1 c p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h mc 754 s 8g e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h mc 754 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx package information elec t ros tat ic sensi t ive d evice o b serve ha n d lin g prec aut ions no tes: 1. le ad fr a me m at eri a l : copper a llo y 2. d imensions a re in inc h es [ millime t ers ] 3. d imension d oes not incl ud e mol d fl a s h of 0.15mm per si d e . 4. d imension d oes not incl ud e mol d fl a s h of 0.25mm per si d e . 5. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to pc b rf g ro u n d.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 7 hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz pin descriptions pin number f unction description i nterface schematic 1, 4 rfin1, rfin2 these pins are d c coupled. an off chip d c block capacitor is required. 5, 8 rfout1/ vcc1, rfout2/ vcc2 rf output and dc bias for the output stage. 2 gnd these pins and package bottom must be connected to rf/ dc ground. 3, 6, 7 n/c n o connection. these pins may be connected to rf ground. p erformance will not be affected.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 8 application circuit for push-pull operation hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz components for selected options tune options s tandard option 1 option 2 e valuation pcb number 124063 126311 124825 t1 [1] etc 1-1-13 m aba ct0039 etc 1-1t-5tr t2 [1] etc 1-1-13 etc 1-1-13 etc 1-1t-5tr l1, l2 180 nh 180 nh 10 uh c 13 open 1.1 p f open [1] 1:1 transformer
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 9 hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz evaluation pcb - standard and option 2 application the circuit board used in the fnal application should use rf circuit design techniques. s ignal lines should have 75 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb [1] i tem description j1, j2 f - c onnector j3 - j6 d c pin c 1 - c 6 1 n f c apacitor, 0402 p kg. c 7, c 8 4.7 f c apacitor, tantalum, 0603 p kg. c 9, c 11 68 p f c apacitor, 0402 p kg. c 10, c 12 10 n f c apacitor, 0402 p kg. l 1, l 2 [2] i nductor, 0603 p kg. r 1, r 2 0 o hm r esistor, 0603 p kg. t1, t2 [2] 1:1 transformer u1 h mc 754 s 8g e amplifer pc b [3] 124061 e valuation pc b [1] when requesting an evaluation board, please reference the appropriate evaluation pc b number listed in the table c omponents for s elected o ptions. [2] p lease refer to c omponents for s elected o ptions table for values [3] c ircuit board m aterial: r ogers 4350 or arlon 25 fr
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 10 evaluation pcb - option 1 application the circuit board used in the fnal application should use rf circuit design techniques. s ignal lines should have 75 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb [1] i tem description j1, j2 f - c onnector j3 - j6 d c pin c 1 - c 6 1 n f c apacitor, 0402 p kg. c 7, c 8 4.7 f c apacitor, tantalum, 0603 p kg. c 9, c 11 68 p f c apacitor, 0402 p kg. c 10, c 12 10 n f c apacitor, 0402 p kg. c 13 1.1 p f c apacitor, 0402 p kg. l 1, l 2 180 nh i nductor, 0603 p kg. r 1, r 2 0 o hm r esistor, 0603 p kg. t1, t2 [2] 1:1 transformer u1 h mc 754 s 8g e amplifer pc b [3] 126309 e valuation pc b [1] when requesting an evaluation board, please reference the appropriate evaluation pc b number listed in the table c omponents for s elected o ptions. [2] p lease refer to c omponents for s elected o ptions table for values [3] c ircuit board m aterial: r ogers 4350 or arlon 25 fr hmc754s8ge v00.0409 gaas hbt high linearity push-pull amplifier, 75 ohm, dc - 1 ghz


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